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2 379 784

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(51)

IPC

H01L21/316(2006-01-01)

B82B3/00(2006-01-01)

(21) (22)

Application

2008147630/28, 2008-12-02

(24)

Start date

2008-12-02

(22)

Actual filing date

2008-12-02

(45)

Published

2010-01-20

(72)

Inventor

Chernyshov Vadim ViktorovichKukuev Vjacheslav Ivanovich

(73)

Holder

Gosudarstvennoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet"

METHOD OF MAKING THIN FILMS CONTAINING NANOSTRUCTURED TIN DIOXIDE Russian patent published in 2010 - IPC H01L21/316 B82B3/00

Abstract RU 2379784 C1

FIELD: physics; nanotechnology.

SUBSTANCE: invention relates to nanotechnology and can be used for making sensors, devices for monitoring composition of gas mixtures, optical devices, in optoelectronics and nanoelectronics. In the method of making thin films which contain nanostructured tin dioxide, pores in cells of nanostructured aluminium oxide are filled with tin metal, after which tin is oxidised in air at 250-450°C for 40-90 minutes.

EFFECT: obtaining uniformly ordered tin dioxide structures.

1 ex

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RU 2 379 784 C1

Authors

Chernyshov Vadim Viktorovich

Kukuev Vjacheslav Ivanovich

Dates

2010-01-20—Published

2008-12-02—Filed