FIELD: chemistry.
SUBSTANCE: film Al2O3 is applied by ion-plasma sputtering to the layer of porous silicon with a pore size of less than 3 nm produced by electrochemical etching of the initial single crystal silicon plate at the operating chamber pressure in the range of 3-5⋅10-3 mm Hg and the target potential of 400-600 V.
EFFECT: providing an opportunity to create an efficient method for manufacturing a nano-profiled ultra-thin aluminium dioxide film on the surface of porous silicon.
2 cl, 2 dwg
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