POWER SWITCH CONTROL CIRCUIT BASED ON IGBT OR MIS TRANSISTORS Russian patent published in 2024 - IPC H03K17/567 H03K17/691 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering, including pulse power conversion equipment, and is intended for use in various contactless switching devices for conversion and regulation of electric power, including in high-frequency devices, where tasks of reducing dynamic losses and, consequently, increasing efficiency of the device are most relevant. Power switch control circuit comprises an insulating double-winding transformer, a power switch, a first and a second complementary bipolar transistor, a third bipolar transistor of n-p-n type, a shunting MIS transistor with an n-type channel, single-phase bridge rectifier, capacitor connected in parallel to output terminals of bridge rectifier, additional bridge rectifier, including first and second pairs of diodes, first and second series-connected resistors are connected between the combined cathodes and the combined anodes of the additional rectifier, the first and second complementary transistors are connected by a common emitter to the gate of the shunting MIS transistor, collector of the first complementary n-p-n type transistor is connected to the positive output terminal of the bridge rectifier, and the collector of the second complementary p-n-p type transistor is connected to the negative one, bases of the first and second complementary transistors are combined and by means of a resistor are connected to the positive output terminal of the bridge rectifier, as well as to the collector of the third bipolar transistor, the base of which is connected to the common point of the first and second series-connected resistors, and the emitter is connected to the common point of the anodes of the second pair of diodes of the additional rectifier, the drain of the shunting MIS transistor is connected to the gate of the power switch, and a source with a negative output terminal of the bridge rectifier and a negative electrode of the power switch, a resistor is installed between the negative electrode and the gate of the power switch, primary winding of the transformer is connected to the control device, also contains a MIS transistor with a p-type channel, the drain of which is connected to the gate of the power switch, and the source is connected to the positive output terminal of the bridge rectifier, connected as a complementary to the shunting MIS transistor with an n-type channel, wherein the gates of the complementary MIS transistors are combined.

EFFECT: considerable expansion of the frequency range of using the power switch controlled by the proposed driver, due to considerable reduction of dynamic losses and, thus, higher efficiency of the entire device.

1 cl, 1 dwg