POWER SWITCH CONTROL DIAGRAM BASED ON IGBT OR MOS TRANSISTORS Russian patent published in 2023 - IPC H02M1/08 

FIELD: electrical engineering; pulsed power converter technology.

SUBSTANCE: invention is intended for use in any contactless switching devices for converting and regulating electricity, including devices where the duration of operation of the power switch exceeds half the period of the operating frequency. A power switch control circuit based on IGBT or MOS transistors contains an isolating two-winding transformer, a power switch, the first and the second complementary bipolar transistors, a single-phase bridge rectifier including the first and the second diodes with common cathodes and the first and the second zener diodes with common anodes, and the secondary transformer winding is connected to the diagonal of the bridge rectifier for alternating current, a capacitor connected in parallel to the output terminals of the bridge rectifier, the third n-p-n bipolar transistor, a shunt MOS transistor, and the first and the second complementary transistors are connected by a common emitter to the gate of the shunt MOS transistor, the collector of the first complementary n-p-n type transistor is connected to the positive output terminal of the bridge rectifier, and the collector of the second complementary p-n-p type transistor is connected to the negative output terminal of the bridge rectifier, the bases of the first and second complementary transistors are combined and connected through a resistor to the positive terminal of the bridge rectifier, the base of the third bipolar transistor is connected to the common point of the first and second series-connected resistors, the collector of the third bipolar transistor is connected to the common base of the first and the second complementary transistors, and its emitter is connected to the first of two series-connected resistors, the drain of the shunt MOS transistor is connected to the gate of the power switch, and is also connected through a resistor to the second of two series-connected resistors, the source of the shunt MIS transistor is connected to the negative terminal of the rectifier and the negative electrode of the power switch, a resistor is installed between the negative electrode and the gate of the power switch, the primary winding of the transformer is connected to the control device, and additionally contains the first and the second pairs of diodes, wherein the first pair has combined cathodes, and the second anode, the common point of the cathodes of the first pair is connected to the second of two series-connected resistors, the anodes of the diodes of the first pair are connected to the anodes of the rectifier bridge diodes, the common point of the anodes of the second pair of diodes is connected to the emitter of the third n-p-n bipolar transistor type, and their cathodes are connected to the cathodes of the zener diodes of the rectifier bridge.

EFFECT: expansion of the functionality of the power switch controlled by the proposed driver, characterized by an increase in the duty cycle of the power switch to a value arbitrarily close to unity.

1 cl, 1 dwg