SEMICONDUCTOR PHOTOELECTRIC CONVERTER AND METHOD OF MAKING SAID CONVERTER (VERSIONS) Russian patent published in 2012 - IPC H01L27/142 H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to a semiconductor photoconverter, having an array of microelements which are successively interconnected by contacts, said microelements having a base region, doped regions in form of n⁺-p-p⁺ (p⁺-n-n⁺) diode structures and an antireflective film, a n⁺-p (p-n) junction plane, p-p⁺(n-n⁺) isotype junctions and contacts with doped n⁺ (p⁺) regions perpendicular to two working sides on which radiation falls, and one or two linear dimensions of each microelement are comparable with the diffusion length of minority charge carriers in the base region; each microelement has along the working sides a region with additional p-p⁺(n-n⁺) isotype junctions separated from the n⁺-p (p⁺-n) junctions and isotype junctions by an interval whose width is at least 10 times less than the size of the microelement, and an area of the base and doped n⁺ (p⁺) regions on the working sides has a passivating antireflective film.

EFFECT: high efficiency and low cost of making photoelectric converters consisting of multiple micro-photoconverters.

6 cl, 2 dwg