FIELD-EFFECT HALL SENSOR Russian patent published in 2010 - IPC H01L29/82 H01L27/22 

FIELD: physics.

SUBSTANCE: field-effect Hall sensor can be used in measurement technology, security systems, automation and robotics. The field-effect Hall sensor has an insulating substrate on which there is a semiconductor channel made from semiconductor diamond and having two ohmic current-conducting contacts at the ends of the channel and two oppositely lying ohmic Hall contacts on lateral surfaces of the channel whose outer surface is coated with a dielectric layer on the surface of which there is a gate electrode.

EFFECT: design of a highly sensitive field-effect Hall sensor with working temperature up to 500°C.

3 dwg, 1 tbl