POWERFUL MICROWAVE FIELD EFFECT TRANSISTOR BASED ON A SEMICONDUCTOR HETEROSTRUCTURE BASED ON GALLIUM NITRIDE Russian patent published in 2022 - IPC H01L29/772 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to semiconductor electronics based on gallium nitride, in which the semiconductor heterostructure is made in the form of the following direct sequence of the mentioned layers of narrow-band gap and wide-band gap materials of the semiconductor heterostructure: a buffer layer of GaN with a thickness of 1.0-3.0 mcm, while directly on the said substrate a layer of AlN with a thickness of 0.5-0.7 nm, a barrier layer of AlGaN with a thickness of less than 25 nm, part of the semiconductor heterostructure outside the area of the gate electrode location to a depth from the upper, outer surface, the surface of the barrier layer and up to 0.9-2.9 mcm from its lower surface is doped with a donor impurity with a concentration of an alloying impurity of 10¹⁸-10¹⁹ cm^-3, while the source and drain electrodes are made on the upper, outer surface of the mentioned regions of the semiconductor heterostructure doped with a donor impurity, respectively, the gate electrode is made on the upper, outer surface of the barrier layer or it is buried into the mentioned layer to a predetermined depth, while the gate electrode is made of a predetermined length, width and geometric shape. The passivating coating made of dielectric material is 5-10 nm thick.

EFFECT: increase in output power and gain, a decrease in noise coefficient, an increase in the steepness of the volt–ampere characteristic

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