HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR ON SEMICONDUCTOR HETEROSTRUCTURE BASED ON GALLIUM NITRIDE Russian patent published in 2024 - IPC H01L29/772 

FIELD: microelectronics.

SUBSTANCE: according to the invention, a high-power microwave field-effect transistor based on a gallium nitride-based semiconductor heterostructure comprises a semiconductor heterostructure on the front side of the semiconductor substrate, made in the following positive sequence of the following composition with the following structural parameters of its layers: nucleating layer – aluminium nitride AlN, with thickness of 15-25 nm, buffer layer – gallium nitride GaN, is simultaneously doped with iron (Fe) and carbon (C), with concentration of dopant 10¹⁸-4×10¹⁸ cm^-3 and 2×10¹⁸-2×10¹⁹ cm^-3, respectively, with thickness of 1.1-1.3×10³ nm, at least one pair of one layer – narrow-bandgap GaN, and one layer – wide-bandgap AlN materials of semiconductor heterostructure layers, forming two-dimensional electronic gas channel of field-effect transistor near heterointerface of these layers, barrier layer – aluminium gallium nitride Al_xGa_1-xN, is made with molar fraction x of the chemical element of aluminium Al 50-60 percent, in the area of location of the channel of the field-effect transistor an additional passivating coating – silicon nitride Si₃N₄, is made on the upper surface of the barrier layer, in the area of the field-effect transistor channel with thickness of 2-5 nm, the contact layer – gallium nitride GaN, is made in the area of the source and drain electrodes, respectively, at the depth from the upper surface of the barrier layer and up to 10-15 nm from the upper surface of the layer – narrow-gap GaN material.

EFFECT: invention increases output power of the amplification factor, the steepness of the current-voltage characteristic, and reduces the noise factor, including by reducing the specific resistance of ohmic contacts.

5 cl, 1 dwg, 1 tbl