METHOD FOR MANUFACTURING A HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR BASED ON A SEMICONDUCTOR HETEROSTRUCTURE BASED ON GALLIUM NITRIDE Russian patent published in 2023 - IPC H01L21/335 H01L29/772 B82Y40/00 

FIELD: microwave electronics.

SUBSTANCE: invention relates to microwave electronics. A method for manufacturing a high-power microwave field effect transistor based on a semiconductor heterostructure based on gallium nitride according to the invention includes forming a semiconductor heterostructure based on gallium nitride on the front surface of the substrate in the form of a sequence of layers, forming a given topology of the elements of the active region of the field effect transistor on the layers of the semiconductor heterostructure, providing for the formation of a channel in the form of a two-dimensional electron gas near the heteroboundary of layers of narrow-gap and wide-gap materials of a semiconductor heterostructure, ohmic contacts of the source and drain electrodes, a gap under the gate electrode, the Schottky barrier-type gate electrode itself, the formation of a passivating coating from a dielectric material, while the formation of a semiconductor heterostructure on the substrate and the sequence of technological operations of the manufacturing process as a whole is carried out in two stages, at the first stage, the formation of a direct sequence of layers of a semiconductor heterostructure - a GaN buffer layer with a thickness of (2.0-3.0)×10^-6 m, an AlN layer with a thickness of (0.5-0.7)×10^-9 m, an AlxGa1-xN barrier layer, where х is equal to 0.24-0.26, with a thickness of less than 25.0×10^-9 m, of an additional passivating Si₃N₄ coating on the front surface of the AlxGa1-xN barrier layer with a thickness of (5.0-10.0)×10^-9 m, at In this case, the above layers are formed in a single technological process, the formation of the topology of the elements of the active region of the field-effect transistor on the front surface of the AlxGa1-xN barrier layer, while simultaneously determining the location of the active region of the gap under the gate electrode, by means of the method for reactive ion etching in inductively coupled plasma of a mixture of gases - Cl₂ and BCl₃, at their ratio of 1:9, respectively, at a pressure of 3.1-3.3 Pa, at the second stage, the contact layer of the semiconductor heterostructure is formed, in the form of GaN, in the area of the source and drain electrodes, respectively, at a depth equal to the sum of the thicknesses the mentioned layers of the semiconductor heterostructure formed at the first stage, from the front surface of the AlxGa1-xN barrier layer and up to (1.9-2.9)×10^-6 m from the back surface of the GaN buffer layer, with simultaneous doping of the GaN contact layer with a silicon donor impurity Si with a dopant concentration of 1019-1020 cm^-3, the formation of mesa insulation of the active region of the field-effect transistor by means of reactive ion etching in an inductively coupled plasma of a mixture of gases - Cl₂ and BCl₃, with their ratio 1 :9, respectively, pressure 3.1-3.3 Pa, ohmic contacts of the source and drain electrodes on the front surface of the mentioned contact layer in the form of GaN, a slot for the gate electrode according to a different topology of the elements of the active region of the field-effect transistor and the gate electrode itself, passivating coating at the same time on the entire front surface of the active area of the field-effect transistor with a thickness of (50-100)×10^-9 m, with protection of the source, drain, channel and gate electrodes.

EFFECT: invention provides an increase in output power and gain, a reduction in noise figure, an increase in quality, and a simplification of the manufacturing method.

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