HIGH-FREQUENCY MAGNETOSENSITIVE NANOELEMENT Russian patent published in 2010 - IPC H01L43/00 B81B7/00 

FIELD: physics.

SUBSTANCE: high-frequency magnetosensitive nanoelement has a substrate with a dielectric layer, top and bottom protective layers, between which there is a ferromagnetic film with the easy magnetisation axis directed at an angle to the longitudinal axis of a thin-film magnetoresistive strip. Under the thin-film magnetoresistive strip there is a first insulating layer with a planar conductor covered by a second insulating layer on top of which there is a surface protective layer. The thin-film magnetoresistive strip consists of thin-film magnetoresistive sections of different width and length, where the length and width of the said thin-film magnetoresistive sections differ from one and half to three times.

EFFECT: design of a high-frequency magnetosensitive nanoelement based on thin-film resistive strips having the required amplitude-frequency characteristic (AFC) and good technical characteristics.

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