HIGH-FREQUENCY MAGNETOSENSITIVE NANOELEMENT Russian patent published in 2011 - IPC G01R33/09 H01L43/08 B82B1/00 

FIELD: physics.

SUBSTANCE: nanoelement has a substrate with a dielectric layer on which there is a thin-film magnetoresistive element. The magnetoresistive element has top and bottom protective layers between which there is a ferromagnetic film with a magnetic easy axis directed at an angle to parallel sides of the thin-film magnetoresistive element. On top of the thin-film magnetoresistive element there is an insulating layer on which there is a planar conductor, on top of which there is a surface protective layer. The thin-film magnetoresistive element is in form of a thin-film magnetoresistive prism whose sloping sides lie along the axis of the conductor, wherein between the planar conductor and the surface protective layer, there is an additional insulating layer and an additional planar conductor. The nanoelement can have several successive thin-film magnetoresistive prisms with different length and dimensions of parallel sides.

EFFECT: smooth change in amplitude-frequency characteristics.

2 cl, 4 dwg