MAGNETORESISTIVE THRESHOLD NANOELEMENT Russian patent published in 2008 - IPC H01L43/08 

FIELD: physics.

SUBSTANCE: present invention pertains to magnetic nanoelements and can used in magnetic field and current sensors, memory and logic elements, galvanic decouplers based on multiple-layer nanostructures with magnetoresistive effect. The essence of the invention lies in the magnetoresistive threshold nanoelement, which comprises a substrate with a first insulation layer on it, on which there is a pointed multiple layer magnetoresistive strip, consisting of a first protective layer, a soft magnetic film, and a second protective layer. On top of the pointed multiple layer magnetorisistive strip there is a second insulation layer with a control conductor deposited on it, and a third insulation layer. The working part of the control conductor lies across the length of the side of the pointed multiple layer magnetoresistive strip, and the axis of the easily magnetised film is directed along the length of the side of the pointed multiple layer magnetoresistive strip.

EFFECT: formation of a megnetoresistive threshold nanoelement based on a thin-film multiple layer nanostructure with planar flow of sensor current, with small control currents.

4 cl, 7 dwg