FIELD: instrument making.
SUBSTANCE: device comprises ceramic body, in groove of which there are heads of metal leads installed, connected with crystal of semiconductor diamond. Connection is made by method of "flip-chip" assembly with application of Au-containing alloy. Specified slot is filled with sealant.
EFFECT: increased accuracy of measurements and expanded range of measured temperatures.
5 cl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR DEVICE | 2008 |
|
RU2392696C1 |
| LIGHT-EMITTING DIODE SEMICONDUCTOR DEVICE IN CASING FOR SURFACE WIRING | 2003 |
|
RU2267188C2 |
| DEVICE FOR DIE BONDING | 2011 |
|
RU2468470C1 |
| COMPOSITE MATERIAL, PROCESS OF ITS PRODUCTION, PANEL OF SEMICONDUCTOR DEVICE EMITTING HEAT, SEMICONDUCTOR DEVICE ( VARIANTS ), DIELECTRIC PANEL AND ELECTROSTATIC ABSORBING FACILITY | 2000 |
|
RU2198949C2 |
| HEAVY-LOAD-CURRENT SEMICONDUCTOR DEVICE PACKAGE | 2006 |
|
RU2322729C1 |
| SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURING | 2012 |
|
RU2507634C1 |
| SHF HIGH-POWER TRANSISTOR WITH MULTILAYER EPITAXIAL STRUCTURE | 2012 |
|
RU2519054C1 |
| HIGH-POWER SHF TRANSISTOR | 2012 |
|
RU2519055C1 |
| HIGH-TEMPERATURE CIRCUIT STRUCTURES | 2001 |
|
RU2248538C2 |
| MEDIUM-WAVE INFRARED SEMICONDUCTOR DIODE | 2011 |
|
RU2570603C2 |
