METHOD OF DETERMINING CONCENTRATION OF ELECTRICALLY ACTIVE DONOR IMPURITY IN SURFACE LAYERS OF SILICON BY NONDESTRUCTIVE METHOD OF ULTRA-SOFT X-RAY EMISSION SPECTROSCOPY Russian patent published in 2019 - IPC C30B29/06 G01N13/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to nanotechnology, nanoelectronics and microelectronics. Method of determining concentration of electrically active donor impurity in surface layers of silicon, involving a procedure for recording characteristic X-ray emission Si L2.3 spectra of heavily doped silicon at concentration of electrically active donor impurity N_D≥10¹⁸ cm^-3 in the region of the valence band of silicon and in the region of the impurity subband of electrically active donors using a nondestructive ultra-soft X-ray emission spectroscopy method, characterized in that registration of X-ray emission spectra is carried out at voltage U = 3 kV on anode of demountable X-ray tube of monochromator spectrometer, at anode current density of 2 mA/cm² with determination of relative intensity I_D donor maximum lying in the X-ray emission Si L2.3 spectrum above the silicon valence band top at the energy E = 100 eV, corresponding to the concentration of the electrically active donor impurity in the surface layers with thickness ≤120 nm heavily doped silicon, determined from logarithmic dependence of relative intensity of donor maximum on concentration of electrically active donor impurity, described by following ratio: I_D=A⋅lgN_D+B, where I_D is relative intensity of donor maximum in X-ray emission Si L2.3 spectrum; N_D is concentration of electrically active donor impurity; A and B are empirical constants which are equal to 0.1 and -1.94 respectively.

EFFECT: technical result consists in development of direct experimental method for quantitative determination of electrically active donor impurity in surface layers with thickness ≤120 nm of silicon with level of doping ≥10¹⁸ cm^-3 non-destructive method of ultra-soft X-ray emission spectroscopy.

1 cl, 3 dwg, 1 ex