METHOD OF THE TWO-DIMENSIONAL POTENTIAL TEMPERATURE DEPENDENCE DETERMINING IN TWO-GATE SYMMETRIC FULLY DEPLETED FIELD TRANSISTORS WITH THE “SILICON ON THE INSULATOR” STRUCTURE; WITH THE GAUSSIAN VERTICAL PROFILE OF THE WORKING AREA DOPING Russian patent published in 2018 - IPC H01L21/66 

FIELD: electronic equipment.

SUBSTANCE: invention relates to the field of micro- and nano-electronics, namely to the determination of the semiconductor devices physical parameters, in particular to the determination of the potential distribution temperature dependence in two-gate symmetric fully depleted field-effect transistors with the "silicon on an insulator" structure with a Gaussian vertical profile of the working area doping, and can be used in the integrated circuits modeling and development in specialized programs. Technical result is achieved by a method of the potential two-dimensional distribution temperature dependence determination in two-gate symmetric fully depleted field-effect transistors with the "silicon on an insulator" structure with a Gaussian vertical profile of the working area doping, which includes no more than six measurements of the dopant concentration along the depth of the transistor working area and extraction of the profile physical parameters from the experimental data: steepness, characteristic depth, peak concentration, with the following calculating the of the potential two-dimensional distribution temperature dependence according to a definite relationship.

EFFECT: technical result of the invention is a reduction in labor costs for measuring parameters, increasing the speed for the potential distribution temperature dependence calculation, and using less computing resources.

1 cl, 4 dwg