MICROWAVE FREQUENCY ATTENUATOR Russian patent published in 2011 - IPC H01P1/22 

FIELD: radio engineering.

SUBSTANCE: microwave frequency attenuator with continuous control contains two transmission lines with similar wave resistances; one of those is intended for microwave signal input, and the other one - for microwave output, and field transistors with Schottky barrier junction, two resistors, piece of transmission line; at that, gates of field transistors with Schottky barrier junction are connected with control voltage source. In addition, there introduced is the second control voltage source, two inductors; sinks of field transistors with Schottky barrier junction are connected to the first ends of resistors respectively, and the other ends of resistors are connected to each other and to the second control voltage source; one end of piece of transmission line is connected to transmission line at input and - to source of the first field transistor with Schottky barrier junction and - to one end of the first inductor; the other end of piece of transmission line is connected to transmission line at output and - to source of the second field transistor with Schottky barrier junction and - to one end of the second inductor; the other ends of inductors are earthed, and wave resistance of piece of transmission line is equal to waveguide resistance of transmission line at input or output, and resistance of each of resistors is equal to one fifth of wave resistance of transmission line piece.

EFFECT: enlarging functional capabilities, providing the possibility of controlling the microwave signal attenuation value and microwave signal attenuation curvature, and reducing initial losses of microwave signal.

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