AVALANCHE PHOTODIODE AND METHOD FOR ITS MANUFACTURE Russian patent published in 2022 - IPC H01L31/107 H01L31/18 B82Y20/00 B82Y40/00 

FIELD: optical communication systems.

SUBSTANCE: invention can be used in optical communication systems, in measurement systems as an optoelectronic sensor, including when registering single photons in quantum cryptography systems, in integrated optoelectronics and integrated circuit testing systems, as well as in other areas involving the registration of an optical signal. According to the invention, a semiconductor heterostructure for an avalanche photodiode is proposed, containing epitaxial layers located on a substrate, including an upper layer consisting of at least two layer parts - with the first part intended for the formation of an avalanche multiplication region, and the second part intended for the formation of a local zinc alloying region made of InP, while the first part is made of InP and separated from the second part by an intermediate part in the form of an epitaxial stop layer made of crystalline silicon (Si) with the possibility of ensuring the electrical inactivity of this stop layer in the InP material. A method for manufacturing a semiconductor heterostructure for an avalanche photodiode, an avalanche photodiode based on the mentioned heterostructure and a method for its manufacture are also proposed.

EFFECT: invention provides a controlled depth of the front of the diffusion boundary of the alloying impurity during the formation of a p+ region in a semiconductor heterostructure during the manufacture of an avalanche photodiode, characterized by a decrease in the thickness of the avalanche multiplication region (less than 10%), with a decrease in the concentration of electrically active defects and impurities in the avalanche multiplication region due to a decrease in the concentration of the alloying impurity (less than 2×10¹⁵ cm^-3) in this area.

29 cl, 9 dwg, 12 tbl