METHOD FOR MANUFACTURING OF INTEGRATED SCHOTTKY-pn DIODES BASED ON SILICON CARBIDE Russian patent published in 2010 - IPC H01L21/329 

FIELD: electricity.

SUBSTANCE: method for manufacturing of integrated Schottky-pn diodes on the basis of silicon carbide includes development of p-areas with rectangular profile of alloying by implantation of boron ions with energies from the range of values (190÷700) keV and doses from the range of (1*10¹³÷1*10¹⁵) cm^-2 in weakly alloyed epitaxial layer of silicon carbide of n-type, arranged on intensely alloyed substrate of silicon carbide of n-type, at room temperature through photoresist mask for simultabneous formation of the main protective pn-transition, floating protective rings and subcontact p-areas. Implantation is carried out by means of photolithography with resolution from 0.5 micrometre to 1 micrometre, then annealing is performed in inertial atmosphere at the temperature from the range of (1500÷1600)°C for the time of (30÷90) minutes under layer of applied graphite. Further surface is oxidised, sputtering is carried out onto reverse side of nickel plate, as well as its burn-in to shape ohm contact, opening windows in oxide and sputtering of nickel Schottky contact with further annealing in inertial atmosphere.

EFFECT: invention makes it possible to produce integrated Schottky-pn diodes with increased breakthrough voltage by simpler and cheaper method with preservation of efficiency.

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