IONISING RADIATION SENSOR Russian patent published in 2015 - IPC G01T1/18 

FIELD: physics.

SUBSTANCE: ionising radiation sensor (sensitive element) is a p-i-n structure made via a planar technique. The sensor comprises a high-resistivity silicon substrate of n-type 1 conductivity, on the front (working) side of which there are p-regions 2, 3, a layer 4 (coating) of SiO₂, an aluminium metal coating 5, a passivating (protective) layer 6. A p-region 2 located in the central part of the substrate and which occupies a large part of the surface area forms the sensitive region of the sensor. At least two p-regions 3, made in the form of annular elements (collar rings), are located in an insensitive region on the periphery of the substrate around the central p-region 2 to enable reduction of the value of surface current and gradual potential drop from the sensitive region to the periphery of the device. In the SiO₂ layer 4 there are windows 7 for providing contact between the metal (aluminium metal coating) and the p-region; in the passivating layer over the p-region located in the central part of the substrate, there is window 8 for contacting with the p-n region during testing and windows 9 for connecting leads. There is a layer of an n-region 10 and metal 11 on the substrate on the side opposite the front surface.

EFFECT: faster measurement of radiation background, smaller size and weight of the device, wider range of detected energies.

11 cl, 6 dwg