INTEGRATED SCHOTTKY-pn DIODE ON BASIS OF SILICON CARBIDE Russian patent published in 2010 - IPC H01L29/872 

FIELD: electricity.

SUBSTANCE: integrated Schottky-pn diode on the basis of silicon carbide includes highly doped substrate from n-type silicon carbide and epitaxial layer from n-type silicon carbide (10-13) mcm thick with concentration of impurity of (1-2)10¹⁵ cm^-3, which is located on its upper side. In epitaxial layer there created are planar p-n junctions with areas doped with boron and having similar depth, some part of which is located under nickel Schottky contact, and the rest are made in the form of protective structure covered with a layer of silicon oxide. Protective structure consists of the main p-n junction and floating protective rings. On reverse side of substrate there located is nickel ohmic contact, and all the above p-n junctions in the area of metallurgical boundary have diffusion profile of distribution of impurities, and ratio of their depth to thickness of epitaxial layer meets the ratio 0.08≤h/d≤0.20, where h - depth of p-n junctions; d - thickness of epitaxial layer.

EFFECT: increasing breakdown voltage of integrated silicon carbide Schottky-pn diode at the device cheapening.

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