FIELD: far infrared range photodetectors. SUBSTANCE: CdTe epitaxial layer is applied onto CdxHg1-x plate. Then capsulating dielectric layer is applied to both sides of the plate, the plate is annealed and dielectric layer should be removed. EFFECT: high detector ability. 3 cl, 1 dwg
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Authors
Dates
1994-10-30—Published
1990-08-29—Filed