PHOTODIODE INFRARED DETECTOR Russian patent published in 2007 - IPC H01L31/101 

FIELD: infrared detectors.

SUBSTANCE: proposed photodiode infrared detector has semiconductor substrate translucent for spectral photodetection region rays and semiconductor graded band-gap structure disposed on substrate;. graded band-gap structure has following layers disposed one on top of other on substrate end. Highly conductive layer of one polarity of conductivity and fixed forbidden gap width produced by heavy doping; layer of other polarity of conductivity and other forbidden gap width in the form of little hump whose value gradually rises from that corresponding to forbidden gap width of preceding layer and then, with smoother decrease to value corresponding to forbidden gap width of preceding layer or smaller. Working layer of same polarity of conductivity as that of preceding layer and fixed forbidden gap width equal to degree of final decrease in forbidden gap width of preceding layer and also equal to forbidden gap width in first of mentioned layer or smaller. Working layer is provided with p-n junction exposed at its surface. Layer disposed on working-layer p-n junction and having gradually increasing forbidden gap width to value corresponding to working layer and polarity of conductivity reverse to that of working layer.

EFFECT: maximized current-power sensitivity, enhanced maximal photodetection frequency, uniform parameters with respect to surface area.

12 cl, 2 dwg