FIELD: metallurgy.
SUBSTANCE: invention refers to film-forming device, matching unit of said device and to procedure for impedance control and can be implemented for fabricating items with film coating produced by plasma chemical sedimentation from gas phase. The film forming facility consists of a power source, of a matching circuit, of a control section, of an electrode receiving electric power from the power source via the matching circuit and generating plasma on base of electric power inside a film forming chamber. In the chamber there is installed a target for film forming. The control section controls impedance of the matching circuit. The control section maintains constant impedance of the matching circuit during matching iterruption beginning in the first period of time, when the power source starts feeding electric power to the electrode. Also the control section controls matching circuit impedance on base of wave power reflected from the electrode during automatic matching, beginning at the second period of time, when period of matching interruption ends.
EFFECT: invention facilitates control of impedance to avoid plasma extinction caused with rapid load impedance, which can occur immediately after plasma generation.
9 cl, 4 dwg
