METHOD OF FORMING THIN FILMS, DEVICE FOR FORMING THIN FILMS, AND THIN FILM FORMING PROCESS MONITORING METHOD Russian patent published in 2008 - IPC C23C16/513 C23C16/52 C23C16/42 C08J7/06 

FIELD: inorganic chemistry.

SUBSTANCE: invention relates to the method of forming thin films of oxide on the surface of carrying base, a device for forming thin films (variants), and thin film forming process monitoring methods, and can be used during production of packages in different industries. A gaseous mixture containing gaseous monomer and an oxidising reaction gas is converted into plasma by changing the ratio of the gaseous monomer flow value to the reaction gas flow value so that the said ratio is within a set range of over 0 to 0.05. This allows to form thin films with gas protection properties stably and without deviations. In the process of thin film formation, it is determined if a thin film with the required surface properties is formed, by measuring the intensity of the α line of hydrogen and the oxygen emission, which are radiated by the plasma during the thin film formation. The measured values are compared to the corresponding reference intensity values, at which thin films with required layer properties were obtained. The corresponding devices are also developed for the forming and monitoring methods.

EFFECT: formation of thin films with gas protection properties.

17 cl, 11 dwg, 19 ex, 6 tbl