STABILISED SEMICONDUCTOR MICROWAVE GENERATOR WITH FREQUENCY MODULATION OF OUTPUT SIGNAL Russian patent published in 2010 - IPC H03B7/14 

FIELD: electricity.

SUBSTANCE: semiconductor microwave generator with frequency modulation comprises serially connected variable capacitance diode device on avalanche-transit diode (ATD), high-Q resonator, generator on ATD and ferrite valve, to outlet of which system of incidental amplitude modulation (IAM) is connected, consisting of serially connected quick-acting microwave modulator, directional coupler, diode detector and low frequency amplifier (LFA), output of which is connected to low frequency control inlet of quick-acting amplitude microwave modulator.

EFFECT: lower level of incidental amplitude modulation (IAM) of output signal of semiconductor microwave generator down to minus 55-60 dB at frequency of modulating signal.

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