METHOD FOR MANUFACTURING A PHOTOELECTRIC CONVERTER ON A TAPERED GERMANIUM SUBSTRATE Russian patent published in 2022 - IPC H01L31/18 

FIELD: power industry.

SUBSTANCE: invention relates to solar energy, in particular to a method for manufacturing photovoltaic converters. The method involves the formation of a GaInP/Ga(In)As/Ge heterostructure on a germanium substrate with an n-GaAs front contact layer, ohmic contacts on the surface of the n-GaAs contact layer, opening optical windows and spraying an antireflection coating, creating a mesa with a protective coating, forming rear ohmic contacts to a germanium substrate in a mesa, applying a protective coating, gluing a plate with a protective coating on a carrier disk, tapering of germanium substrate by liquid chemical etching, matting of a tapered germanium substrate by liquid chemical etching, passivation of a tapered germanium substrate by deposition of a dielectric coating, deposition of a reflective coating of gold or silver with a protective layer of gold, removal of the protective coating with simultaneous detachment of the plate from the carrier disk and separation of the plate into chips.

EFFECT: method provides a reduction in the specific gravity of the photoelectric converter due to significant tapering of the germanium substrate while maintaining the spectral sensitivity of the germanium p-n junction in the infrared range of the spectrum and its photocurrent and the efficiency of the photoelectric converter as a whole.

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