METHOD FOR MANUFACTURING OF MULTILAYER PHOTOCONVERTER CHIPS Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics, conductors.

SUBSTANCE: invention is related to solar engineering. Method consists in application of ohm contacts on back and frontal surfaces of multilayer semiconductor structure GaInP/Ga(In)As/Ge, grown on germanium substrate, separation of structure on chips by method of chemical etching, immunisation of side surface of chips by dielectric, removal of part of frontal contact layer of structure and application of anti-reflecting coat on frontal surface of structure. After application of ohm contact base onto back surface of structure, structure frontal surface is cleaned by method of ion-beam etching to the depth of 0.005-0.1 mcm. Base of ohm contacts are burnt in at the temperature of 360-370°C for 10-60 s. Base of ohm contacts is thickened by serial electrochemical deposition of gold, nickel and again gold layers through mask of photoresist, with total thickness of 1.6-3.5 mcm. Separating chemical etching of structure is carried out from the side of frontal surface to the depth of 15-50 mcm through mask of photoresist. Immunisation is carried out by application of silicon nitride. Chemical etching of structure contact layer is carried out in the areas that are free from ohm contact, afterwards anti-reflecting coating is applied in areas free of ohm contacts via slots in mask.

EFFECT: production of multilayer photoconverters with improved parametres.

4 cl, 11 dwg, 10 ex