FIELD: manufacture of high-quality substrate plates from single-crystalline silicon. SUBSTANCE: process includes electrochemical formation of porous silicon layer on one side of substrates, treatment of substrates, and removal of porous silicon. The latter is formed on working side of substrate and then porous-silicon surface is brought to amorphous state by irradiating with ions at energy ensuring penetration depth of ions not exceeding thickness of porous silicon layer. Irradiated porous silicon is then removed by chemical and dynamic polishing in acid etching agent. EFFECT: improved uniformity of distribution of electric characteristics of silicon substrates near their working side. 2 tbl, 2 ex
