FIELD: semiconductor device manufacture; silicon-wafer surface post-oxidation etching, boron and phosphor sublimation.
SUBSTANCE: proposed method for removing crystallites from silicon wafer surface includes pre-oxidation of wafer surface in oxygen environment at temperature of 850 °C for 20 minutes followed by chemical treatment in hydrofluoric acid and ammonium fluoride solution, proportion of ingredients being 1 : 6.
EFFECT: provision for complete removal of crystallites from silicon wafer surface after heat treatment, reduced wafer treatment time.
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