METHOD FOR MANUFACTURING INDIUM MICROCONTACTS Russian patent published in 2015 - IPC H01L31/18 

FIELD: chemistry.

SUBSTANCE: invention relates to technology of obtaining indium microcontacts for connection of large integrated circuits (LIC) and photodiode matrices, made on the base of semi-conductor materials. Method for manufacturing indium microcontacts according to invention includes spraying indium layer on semi-conductor plates with contact sites, formation of flat indium sites with width of sprayed indium by methods of photolithography and/or ionic etching, and before connection of matrix and LIC flashing of indium flat sites into truncated spheres is carried out by high-frequency cathode etching with ions of inert gas under partial pressure (8-10)P10^-1 Pa and power density in charge from 1 W/cm², without the following heating.

EFFECT: increase of reliability with simultaneous reduction of indium consumption with application of standard construction of evaporator, reduction of time of ionic etching process of spayed indium layer.

1 ex, 1 tbl, 1 dwg