METHOD OF CORRECTION OF LARGE-SCALE INTEGRATED CIRCUIT TOPOLOGY Russian patent published in 2015 - IPC H01L21/66 

Abstract RU 2560967 C1

FIELD: radio engineering, communication.

SUBSTANCE: in the method of correction of large-scale integrated circuit topology the formation of new links between elements or nodes of the circuit for execution of correction of crystal topology is performed using indium partitions. The formation of indium partitions between the selected metallised buses is performed in mechanical way using electrodes with flat bases.

EFFECT: decrease of cost of execution of operation of correction of topology at minimization of time for its execution.

2 cl, 8 dwg

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RU 2 560 967 C1

Authors

Akimov Vladimir Mikhajlovich

Akimov Vitalij Vladimirovich

Demidov Stanislav Stefanovich

Vasil'Eva Larisa Aleksandrovna

Klimanov Evgenij Alekseevich

Dates

2015-08-20Published

2014-05-26Filed