METHOD FOR INCREASING DOCKING STRENGTH OF CRYSTALS Russian patent published in 2017 - IPC H01L25/04 

Abstract RU 2613617 C2

FIELD: physics.

SUBSTANCE: in the process of increasing the docking strength of the indium microcontacts LSI and MFS by squeezing the indium microcontacts located in the docked crystals, the microcontacts in both crystals are carried out in the form of the elongated rectangles arranged at the angle against each other, a plurality of rectangular microcontacts is formed on the matrix periphery in each crystal, which is combined in grids and create reference indium microcontacts of a large area.

EFFECT: increasing the docking strength of the indium microcontacts.

5 dwg

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RU 2 613 617 C2

Authors

Akimov Vitalij Vladimirovich

Akimov Vladimir Mikhajlovich

Boltar Konstantin Olegovich

Vasileva Larisa Aleksandrovna

Irodov Nikita Aleksandrovich

Klimanov Evgenij Alekseevich

Dates

2017-03-21Published

2015-08-18Filed