METHOD OF MAKING CONTACT COLUMN FOR MULTI-CONTACT HYBRID JUNCTION Russian patent published in 2010 - IPC H01L23/48 

Abstract RU 2392690 C1

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to the technology of making semiconductor devices, their hybrid assembly, and is mainly meant for assembling photodetector modules. In the method of making a contact column for multi-contact hybrid junction on a substrate, contact column workpieces are lithographically made from indium and then put into a vacuum in which a stream of atomic hydrogen is formed with concentration which facilitates the reaction for complete reduction of indium from its surface oxide. Cleaning from the surface oxide and melting of the contact column workpieces are carried out at the same time.

EFFECT: wider field of using the method and increased output of non-defective products owing to high reactivity of hydrogen atoms reacting with the surface, use of a more gentle chemical mechanism for removing oxides via a reduction reaction stimulated by heating with the aim of melting.

8 cl, 4 dwg, 3 ex

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RU 2 392 690 C1

Authors

Novoselov Andrej Rudol'Fovich

Kuz'Min Nikolaj Borisovich

Valisheva Natal'Ja Aleksandrovna

Kosulina Irina Grigor'Evna

Dates

2010-06-20Published

2009-05-26Filed