INTEGRATED CIRCUIT DEVICE AND METHOD OF MAKING SAID DEVICE Russian patent published in 2011 - IPC H01L25/03 

Abstract RU 2419179 C2

FIELD: physics.

SUBSTANCE: integrated circuit device has a first chip with a plurality of via-holes running through the substrate, each containing electrocoductive material, where the first chip has a surface area; and a plurality of second chips, each having a plurality of contact points connected to the electroconductive material of the via-holes of the first chip. The plurality of second chips lies on the first chip such that they jointly form a surface area which is approximately equal to or greater than the corresponding surface area of the first chip. The invention discloses a method of making the integrated circuit device with a plurality of second chips placed on the first chip.

EFFECT: invention enables packing microcircuit chips on one another in order to improve operational characteristics without increasing surface area.

21 cl, 8 dwg

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RU 2 419 179 C2

Authors

Rid Pol

Blehk Brajan

Dates

2011-05-20Published

2007-12-06Filed