FIELD: electricity.
SUBSTANCE: device of a three-dimensional (3-D) multilevel integral circuit comprises first and second semiconductor crystals applied one onto another, multiple through transition holes, formed to pass substantially between active layers of the first and second semiconductor crystals and arranged as capable of providing connection between the first and second semiconductor crystals, and an active circuit formed at least partially inside at least one of many through transition holes, besides, the first and second semiconductor crystals jointly use an active circuit at least for protection against an electrostatic discharge.
EFFECT: invention makes it possible to save space and reduce area of a crystal required for a circuit of an ESD-protection.
11 cl, 4 dwg
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