BIPOLAR TRANSISTOR OF INTEGRATED CIRCUIT Russian patent published in 1998 - IPC

FIELD: microelectronics, integrated circuits of large integration degree. SUBSTANCE: bipolar transistor of integrated circuit incorporates semiconductor mesa insulated by dielectric and including regions of emitter, base and collector. Mesa has steps so arranged that surfaces of steps are located on surface of mesa, in regions of base and collector. Dielectric insulating mesa is also in the form of steps which horizontal surfaces are arranged in three levels corresponding in height to point of location of regions of emitter, base and collector. Conductors to mentioned above regions are electrically connected to corresponding regions on horizontal surfaces of step of mesa and are arranged on horizontal surfaces of steps of dielectric. Horizontal surfaces of steps of dielectric may be arranged at level of horizontal surfaces of steps of mesa. EFFECT: facilitated manufacture. 1 cl, 4 dwg