INTEGRATED BI-MOS RADIATION DETECTOR CELL Russian patent published in 2010 - IPC H01L31/115 G01T1/24

Abstract RU 2383968 C2

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to semiconductor coordinate detectors of particle radiations. The invention proposes a coordinate detector which uses active pixels with functionally integrated bipolar and MOS structures. This enables retention of high coefficient of amplification of ionisation current induced by particles with different noise reduction caused by surface states at the oxide-semiconductor boundary surface owing to optimum control of the surface potential using an insulated gate.

EFFECT: invention increases sensitivity of coordinate detectors and increases the signal to noise ratio.

3 dwg, 1 ex

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RU 2 383 968 C2

Authors

Murashev Viktor Nikolaevich

Dates

2010-03-10—Published

2006-03-20—Filed