PROCEDURES AND EQUIPMENT FOR PRODUCTION OF MONO-CRYSTAL CAST SILICON AND ITEMS OF MONO-CRYSTAL CAST SILICON FOR PHOTO CELLS Russian patent published in 2011 - IPC C30B11/00 C30B28/06 C30B11/14 C30B29/06 H01L31/04 

FIELD: metallurgy.

SUBSTANCE: one of versions is disclosed in procedure for production of cast silicon consisting in contacting melt silicon with at least one seeding crystal of silicon in vessel with one or several side walls heated at least to temperature of silicon melting; also, there is at least one cooled wall. Further, the procedure consists in formation of solid massif of mono-crystal silicon, not necessarily, with at least two dimensions, each at least approximately 10 cm by cooling melted silicon with control of crystallisation. Also, formation of massif includes formation of interface of solid with liquid along rib of melted silicon which at least first is parallel to at least one cooled wall. Interface is controlled during cooling so, that it is transferred in the direction where distance between melted silicon and at least one cooled wall increases. There is produced cast massif of silicon of large dimension (for example, ingots with area of cross section of at least 1 m² and up to 4-8 m²) not containing or practically not containing radially distributed impurities and oxygen induced defects of packing.

EFFECT: more fast, efficient and less expensive procedures facilitating control of dimension, shape and orientation of grains of crystal in cast massif of crystallised silicon.

34 cl, 9 dwg, 3 ex