FIELD: electricity.
SUBSTANCE: in etching method of silicon substrate with formation of silicon columns the substrate is kept in water solution of hydrofluoric acid or its salt, at concentration of 1.5 to 10 M, metal salt at content of 5 to 100 mM, which is capable of chemical deposition of metal on surface of silicon in presence of ions of fluoride and alcohol at content of the latter of 1 to 40 vol %. The second version of etching method of silicon substrate and lithium rechargeable battery with anode which contains silicon substrate made with the use of the proposed etching methods is also described.
EFFECT: obtaining higher columns with improved homogeneity of distribution and increased velocity of formation.
12 cl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF FORMING SILICON FILAMENTS BY METAL-STIMULATED ETCHING WITH THE USE OF SILVER | 2016 |
|
RU2624839C1 |
| METHOD TO MANUFACTURE STRUCTURED PARTICLES CONTAINING SILICON OR SILICON-BASED MATERIAL AND THEIR APPLICATION IN RECHARGEABLE LITHIUM BATTERIES | 2008 |
|
RU2451368C2 |
| METHOD TO MAKE FIBRES OF SILICON OR SILICON-BASED MATERIAL, AND THEIR APPLICATION IN RECHARGEABLE LITHIUM ACCUMULATORS | 2007 |
|
RU2444092C2 |
| METHOD FOR PRODUCING ROUGH SURFACE ON SILICON SUBSTRATES FOR THEIR ANODIC ETCHING | 2003 |
|
RU2217840C1 |
| POROUS, ELECTRICALLY ACTIVE MATERIAL | 2011 |
|
RU2595710C2 |
| METHOD OF FORMING SILICON MICROSTRUCTURES 3D METAL-STIMULATED ETCHING | 2016 |
|
RU2620987C1 |
| METHOD OF IONIC-CHEMICAL ETCHING OF SILICON CONTAINING DIELECTRIC FILMS ON SILICON SUBLAYERS | 0 |
|
SU1040980A1 |
| COMPOSITION FOR DRY ETCHING OF SILICON DIOXIDE FILMS IN PHOTOLITHOGRAPHIC PROCESS | 2013 |
|
RU2524344C1 |
| METHOD OF MAKING SILICON SENSITIVE ELEMENT FOR LUMINESCENT OXYGEN NANOSENSOR | 2013 |
|
RU2539120C1 |
| METHOD OF RODUCTION STRUCTURE "SILICON-ON-INSULATOR" | 2006 |
|
RU2331949C1 |
