METHOD OF FORMING SILICON FILAMENTS BY METAL-STIMULATED ETCHING WITH THE USE OF SILVER Russian patent published in 2017 - IPC H01L21/306 

FIELD: chemistry.

SUBSTANCE: method of forming silicon filaments by metal-stimulated etching using silver consists in growing a layer of porous silicon nanowires by chemical etching of single crystal silicon with the crystallographic orientation of the surface of the p-type plate (100) in places covered with silver in a solution containing hydrofluoric acid, hydrogen peroxide, with further washing in a 65% nitric acid solution to remove silver particles and reaction products, the resistivity of both p- and n-type conductivity is in the range from 10 mΩ·cm up to 12 Ω·cm, the etching solution contains deionized water, the volume of which is 1/10 part of the etching solution HF:H₂O₂:H₂O with a component ratio of 25:10:4, respectively, and silver with a concentration in the solution of 2.9·10^-4 to 26·10^-4 mol/l.

EFFECT: providing an opportunity to improve the quality of layers of porous silicon nano-filaments.

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