FIELD: processes.
SUBSTANCE: invention can be used for micro- and nanoelectronics for manufacturing radiation-hardened integrated chips, sensors and electromechanical system compositions on insulating base. Concept of the invention: as received structure "silicon-on-insulator" plate of single-crystalline silicon of p-type conductivity is put to the anodic etching in electrolytic solution, which contents hydrogen and fluorine ions, and to the anodic oxidation in water solution of electrolytes. After every of procedures plate is dried in inert atmosphere at temperature in the range from 180°C till 400°C. Before high-temperature annealing in temperature range from 1300°C till 1370°C silicon plate with porous layer is encapsulated by protective film. Defects of "silicon tubes" type of buried insulating layer are remedied.
EFFECT: process of production is simplified and operating costs are decreased.
9 cl, 3 dwg
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