METHOD OF FORMING SILICON MICROSTRUCTURES 3D METAL-STIMULATED ETCHING Russian patent published in 2017 - IPC H01L21/308 

FIELD: physics.

SUBSTANCE: invention relates to the technology to generate 3D silicon microstructures are element base of functional microelectronics, metal-stimulated etching using locally located masks Ni. The composition of the solution for etching Silicon include hydrofluoric acid, hydrogen peroxide and deionized water in a volumetric ratio of 2:1:10.

EFFECT: etching process using nickel is a cost-effective process because you can replace expensive noble metals and cheaper technology to create Silicon 3D structures.