MAGNETIC NEURON Russian patent published in 2003 - IPC

FIELD: automatic-control and computer engineering items such as thin-film magnetic elements. SUBSTANCE: magnetic neuron is built around thin-film anisotropic, spin-gate or spin- tunnel magnetoresistive structures which serves as basis of magnetic neuron chip incorporating a great number of magnetic neurons. It has substrate, pointed magnetic strips, and low-resistance nonmagnetic jumpers; magnetic strip has two high-resistance protective layers separated by thin-film, or anisotropic, or spin-gate, or spin-tunnel magnetoresistive structure; it also has second insulating layer (in case of spin-tunnel structure), low-resistance nonmagnetic jumpers, additional insulating layer, layer of control conductors, and one more insulating layer. When spin-tunnel structures are used, magnetic neuron may incorporate additional layer of control conductors, insulating layer, and also it may have clamping layer. EFFECT: improved suitability to production of multiple-neuron magnetic chips. 8 cl, 10 dwg