FIELD: physics.
SUBSTANCE: front contact used in the photovoltaic device according to the invention has an active semiconductor film. The front contact comprises: a front glass substrate; a first film of an essentially transparent conductive oxide (TCO); a second film of an essentially transparent conductive oxide (TCO), having a high work function, wherein the work function of the second TCO film is higher than that of the first TCO; wherein the first TCO film lies between the glass substrate and the second TCO film. The second TCO film, having a higher work function, lies in an essentially solid layer over the first TCO film and is in contact with it such that the first TCO film lies between the first TCO film and uppermost area of the semiconductor film of the photovoltaic device and is in contact with them; and where the first TCO film is more conductive than the second TCO film. The invention also discloses a photovoltaic device and a method of making said device.
EFFECT: invention enables to obtain an improved front contact for a photovoltaic device which lowers the potential barrier for holes extracted from the device by the front contact.
21 cl, 3 dwg
