FRONT CONTACT WITH ADJACENT INTERMEDIATE LAYER(S) FOR USE IN PHOTOELECTRIC DEVICES AND METHOD OF MAKING SAID CONTACT Russian patent published in 2011 - IPC H01L31/216 

FIELD: physics.

SUBSTANCE: photoelectric device comprises: a front glass substrate; a semiconductor film having p-, n- and i-type layers; a film based essentially on a transparent conducting oxide (TCO) lying between at least the front glass substrate and the semiconductor film, and an intermediate film lying between the TCO based film and the semiconductor film (absorber), where the intermediate film is a semiconductor and is characterised by refraction index (n) greater than that of the TCO based film, and less than that of the semiconductor film. Disclosed also is one more version of the photoelectric device and a method of making said device.

EFFECT: invention enables to reduce optical reflection of solar radiation from the TCO-absorber boundary surface, thus increasing the amount of radiation which penetrates the absorber and which can be converted to electrical energy, increase the amount of radiation captured inside the absorber, reduce counter-diffusion of elements between the TCO of the front contact and the absorbing semiconductor film, or form a high-resistance buffer layer between the TCO front contact and the absorber film.

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