FIELD: chemistry.
SUBSTANCE: invention relates to a technique for large area deposition of thin graphene films, which can be doped, for use thereof as a transparent conductive coating. According to one of the versions, an intermediate doped thin graphene film is hetero-epitaxially grown on a catalyst thin film with a single-orientation large-grain crystal structure, placed on a target receiving substrate, which includes solid-state dopants which are incorporated therein by a fusion process, followed by doping the intermediate thin graphene film with n-type or p-type dopants to facilitate migration of the solid-state dopants from the target receiving substrate into the intermediate thin graphene film via thermal diffusion. Once formed, the thin graphene films can be separated from the carrier substrates and transferred to receiving substrates, for example, for incorporation into an intermediate or finished product.
EFFECT: grown, separated and transferred graphene can have low sheet resistance (for example, less than 150 ohms per unit area or lower, when doped) and high light transmission (at least, for example, in the visible and infrared range).
14 cl, 15 dwg, 1 tbl
