FIELD: physics.
SUBSTANCE: disclosed photovoltaic device has a front glass substrate; an active semiconductor film; an electrically conducting and essentially transparent structure of the front electrode lying between at least the front glass substrate and the semiconductor film. The structure of the front electrode has an essentially transparent metal film and a high-work function buffer film. The high-work function buffer film has work function which is higher than that of the metal film, and the high-work function buffer film is placed between the metal film and the uppermost part of the semiconductor film. The high-work function buffer film has an oxygen-rich indium-tin oxide (ITO).
EFFECT: high work function.
29 cl, 4 dwg
