SILICON-BASED DOUBLE-SIDED HETEROJUNCTION PHOTOVOLTAIC CONVERTER Russian patent published in 2021 - IPC H01L31/02 

FIELD: electronics.

SUBSTANCE: invention relates to the field of electronics, namely to semiconductor devices, and can be used in the manufacture of solar cells that are used in energy, space and military technologies, mining, oil refining, chemical industries, etc. A photovoltaic converter (PVC) includes a textured plate of polycrystalline, multicrystalline, monocrystalline or quasi-monocrystalline silicon of n-type (n)c-Si or p-type (p)c-Si with front and back surfaces, with an antiepitaxial buffer layer sequentially located on the front surface in the form of amorphous hydrogenated silicon carbide of intrinsic conductivity (i)-a-Si_xC_x-1:H, passivating layer of amorphous hydrogenated silicon of intrinsic conductivity ia-Si, doped layer of amorphous hydrogenated silicon ((n)a-Si:H) or microcrystalline silicon (n-mc:Si) n-type conductivity, current-collecting layer in the form of an antireflection transparent conductive coating, a current-collecting contact grid, and an antiepitaxial buffer layer in the form of amorphous hydrogenated silicon carbide of intrinsic conductivity (i)-a-Si_xC_x-1:H is sequentially located on the back surface, passivating layer of amorphous hydrogenated silicon of intrinsic conductivity ia-Si, doped layer of amorphous hydrogenated silicon ((p)a-Si:H) or microcrystalline silicon (p-mc:Si) of p-type conductivity, current-collecting layer in the form of an antireflection transparent conductive coating, current collecting contact grid.

EFFECT: invention improves the efficiency and power generation of the heterojunction PVC.

1 cl, 1 dwg