BROADBAND SHF ATTENUATOR Russian patent published in 2014 - IPC H01P1/00 

FIELD: electricity.

SUBSTANCE: broadband SHF attenuator consists of at least one bit and each bit contains transfer lines at the input and output with identical wave-forming resistance, Schottky-barrier field-effect transistor, two resistors and at that the first resistor is connected in parallel and the second one in-series to the attenuator input and output; ends of the first resistor are connected to the source and the drain of Schottky-barrier field-effect transistor respectively, its source and the first resistor are earthed respectively, ends of the second resistor are connected to transfer lines at the input and output respectively. In each bit of the attenuator the following elements are introduced additionally: the second Schottky-barrier field-effect transistor, three inductance coils and two identical resistors - the third and fourth ones, at that the source of the second Schottky-barrier field-effect transistor is connected to transfer line at the input while its drain is connected to transfer line at the output, ends of the first and second inductance coils are connected to the ends of the first and second resistors respectively, one end of the third inductance coil is connected to transfer line at the input while the other one is connected to the source of the first Schottky-barrier field-effect transistor, gates of each Schottky-barrier field-effect transistor are connected to the source of direct-current control voltage through the third and fourth resistors respectively.

EFFECT: increasing width of the working band, decreasing value of voltage standing-wave ratio and value of SHF signal phase change at change of direct-current control voltage with maintenance of low direct losses of SHF.

5 dwg