MICROWAVE ATTENUATOR WITH DISCRETE VARIATION OF ATTENUATION Russian patent published in 2010 - IPC H01P1/22 

Abstract RU 2407115 C1

FIELD: electricity.

SUBSTANCE: microwave attenuator with discrete variation of attenuation comprises two lines of transmission with identical wave resistance, one for microwave signal inlet and the other one - for outlet, three resistors, of which the first one is connected serially, the second one - in parallel to transmission lines at the inlet and outlet, electronic keys - field transistors with Schottky barrier, section of transmission line, and besides, it is additionally equipped with the fourth resistor. Connection of field transistor gates with Schottky barrier with two sources of constant control voltages via the third and fourth resistors accordingly, which are arranged with identical resistance, exceeding wave resistance of transmission line at the inlet or outlet by a factor of ten, makes it possible to considerably reduce values of currents through gates of field transistors with Schottky barrier.

EFFECT: expansion of working frequency band, reduced value of direct microwave losses, reduced value of coefficient of standing voltage wave at the inlet, reduced effect of control voltages by value of microwave signal phase.

5 dwg

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RU 2 407 115 C1

Authors

Balyko Aleksandr Karpovich

Korolev Aleksandr Nikolaevich

Mjakin'Kov Vitalij Jur'Evich

Karpova Nina Alekseevna

Satlejkin Gennadij Pavlovich

Dates

2010-12-20Published

2009-11-30Filed